| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,121 pcs
|
3121 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Gate Charge | |
| Height | |
| Lead Style | |
| Length | |
| Mounting Style | |
| Number of Channels | |
| Power Dissipation | |
| Width |
The Infineon BSP149 H6327 is a single N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 200V and a continuous drain current of 140mA.
The MOSFET has a low drain-source on-resistance of 3.5 Ohms and a gate-source threshold voltage of -1.4V. It operates within a temperature range of -55°C to +150°C and has a power dissipation of 1.8W.
This component is housed in a SOT-223-3 surface-mount package. Key electrical characteristics include a gate-source voltage rating of +/- 20V, a gate charge of 11nC, and a forward transconductance of 800mS. It also offers fast switching times with a rise time of 3.4ns and a fall time of 21ns.
The BSP149 H6327 is suitable for applications requiring efficient switching and voltage control. Its compact SOT-223-3 package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
140 mA.
3.5 Ohms.
-1.4 V (depletion mode).
SOT-223-3 surface mount package.
-55°C to +150°C.
N-channel, depletion mode.