| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22 pcs
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22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BSP149 H6327 is an N-Channel MOSFET belonging to the BSP149 series. This component is designed for general-purpose electronic applications requiring reliable switching and amplification.
Key electrical characteristics include a drain-source breakdown voltage of 200V and a continuous drain current of 140mA. The on-resistance is specified at 3.5 Ohms, with a gate-source threshold voltage of -1.4V. The device operates within a wide temperature range from -55C to +150C and has a power dissipation rating of 1.8W.
Packaged in a SOT-223 surface-mount case, the BSP149 H6327 is suitable for automated assembly processes. The mounting style is SMD/SMT, and it is supplied on a reel. Its dimensions are 6.5mm in length, 3.5mm in width, and 1.6mm in height.
This MOSFET is suitable for various applications within discrete semiconductor circuits. Its specifications make it a versatile component for designers working with power management and signal control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 200V.
The continuous drain current is 140mA.
The on-resistance is 3.5 Ohms.
The operating temperature range is from -55C to +150C.
The MOSFET is supplied in a SOT-223 package.