| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
890 pcs
|
890 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSP135L6906 is an N-Channel Depletion Mode Power MOSFET manufactured by Infineon Technologies. It is designed for applications requiring normally-on switching behavior, with a drain-source voltage rating of 600V and continuous drain current of 120mA at 25°C. The device features a maximum on-resistance of 45 Ohms at 120mA gate drive of 10V, and a gate threshold voltage of 1V at 94µA. Its depletion mode characteristic allows conduction at zero gate voltage, making it suitable for current source and normally-on switch applications. The MOSFET is housed in a TO-261-4 (SOT223) surface-mount package with a supplier device package of PG-SOT223-4-21. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.8W at 25°C ambient. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
The junction temperature range is -55°C to 150°C.
It is available in a TO-261-4 (SOT223) surface-mount package, specifically PG-SOT223-4-21.
Yes, it is listed as RoHS3 Compliant, but this is unverified.
The drain-source voltage (Vdss) is 600V.
The continuous drain current is 120mA at 25°C ambient.
The maximum on-resistance is 45 Ohms at Id=120mA and Vgs=10V.
The maximum gate threshold voltage is 1V at Id=94µA.