BSP129L6327 N-Channel Depletion Mode MOSFET from Infineon Technologies. Rated for 240V drain-source voltage and 350mA continuous current with 6 Ohm on-resistance.
Mfr Part #:

BSP129L6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Depletion Mode MOSFET from Infineon Technologies. Rated for 240V drain-source voltage and 350mA continuous current with 6 Ohm on-resistance.
✓ Total Stock: 4,512 pcs

BSP129L6327 Available from 1 distributor

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BSP129L6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSP129L6327 Description

Short technical summary and product information.

The BSP129L6327 is an N-Channel Depletion Mode MOSFET manufactured by Infineon Technologies. It features a drain-source voltage rating of 240V and a continuous drain current of 350mA. The maximum on-resistance is 6 Ohm at a gate drive of 10V and 350mA drain current. The gate threshold voltage is 1V maximum at 108µA drain current, and the maximum gate-source voltage is ±20V.

 

This device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.8W. The input capacitance is 108pF at 25V drain-source voltage, and the maximum gate charge is 5.7nC at 5V gate voltage. The depletion mode characteristic allows normally-on operation, making it suitable for specific switching and linear applications.

 

The MOSFET is offered in a surface mount TO-261-4 (TO-261AA) package, with a supplier device package of PG-SOT223-4-21. It is designed for surface mount assembly, enabling compact PCB layouts in power management and signal switching circuits.

BSP129L6327 Quick Information

Product Type: N-Channel Depletion Mode MOSFET
Canonical Name: Infineon BSP129L6327 N-Channel Depletion Mode MOSFET
Subcategory: Single MOSFET

BSP129L6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSP129L6327 Features

  • N-Channel depletion mode MOSFET.
  • 240V drain-source voltage rating.
  • 350mA continuous drain current.
  • 6 Ohm maximum on-resistance.
  • Surface mount SOT-223 package.

BSP129L6327 Applications

  • Used in low-power switching circuits.
  • Suitable for linear amplifier stages.
  • Ideal for normally-on load switching.
  • Applicable in power management modules.

BSP129L6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the BSP129L6327?

The drain-to-source voltage (Vdss) is 240V.

What package does the BSP129L6327 come in?

It is available in a TO-261-4 (TO-261AA) surface mount package, with a supplier device package of PG-SOT223-4-21.

What is the operating temperature range of the BSP129L6327?

The operating junction temperature range is -55°C to 150°C.

Is the BSP129L6327 RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

What is the maximum drain current of the BSP129L6327?

The maximum continuous drain current is 350mA (Ta).

What is the on-resistance of the BSP129L6327?

The maximum drain-source on-resistance is 6 Ohm at 350mA drain current and 10V gate-source voltage.

What is the mounting type for the BSP129L6327?

The mounting type is Surface Mount.

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