| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSP129H6327XTSA1 is an N-channel depletion mode MOSFET from Infineon Technologies' SIPMOS family. It features a drain-source breakdown voltage of 240V and a continuous drain current of 350mA at 25°C (280mA at 70°C), making it suitable for low-power switching and linear applications. The device is packaged in a surface-mount TO-261-4 (PG-SOT223-4) package, supporting automated assembly.
Key electrical characteristics include a maximum on-state resistance (RDS(on)) of 6Ω at Vgs=10V, a typical gate threshold voltage of -1.4V, and a maximum gate charge of 5.7nC. Input capacitance is 108pF at Vds=25V, and the reverse diode is rated for dv/dt of 6kV/µs. The operating junction temperature range spans -55°C to 150°C, with a maximum power dissipation of 1.8W.
This depletion-mode MOSFET is normally-on at zero gate voltage, enabling applications such as normally-on switches, current regulators, and linear amplifiers. It is qualified to AEC Q101 for automotive use and is RoHS3 compliant with halogen-free materials per IEC61249-2-21. The device is supplied in tape and reel packaging with 1000 pieces per reel, suitable for high-volume production.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.10 | $1.10 |
| 10+ | $0.67 | $0.67 |
| 100+ | $0.45 | $0.45 |
| 500+ | $0.35 | $0.35 |
| 1,000+ | $0.30 | $0.30 |
| 2,000+ | $0.26 | $0.26 |
| 5,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 240V.
The device is available in a TO-261-4 / TO-261AA package, also known as PG-SOT223-4.
The junction operating temperature range is -55°C to 150°C.
Yes, the datasheet indicates RoHS3 compliance with Pb-free lead plating.
Yes, it is a depletion mode N-channel MOSFET, meaning it is normally-on at zero gate voltage.
The maximum continuous drain current is 350mA at 25°C and 280mA at 70°C.
Yes, it is qualified according to AEC Q101.