| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The Infineon BSP129 is a SIPMOS® Small-Signal-Transistor featuring N-channel depletion mode operation. It is designed for various electronic applications requiring reliable switching and amplification.
Key electrical characteristics include a drain-source breakdown voltage of 240V and a gate threshold voltage ranging from -2.1V to -1V. The drain-source on-state resistance is specified at a maximum of 20W at VGS=0V, ID=25mA, and a typical 4.2W at VGS=10V, ID=0.35A. Dynamic characteristics such as input capacitance (Ciss) are typically 82pF, and output capacitance (Coss) is typically 12pF.
This MOSFET is qualified according to AEC Q101 and features Pb-free lead plating, making it RoHS compliant. It is supplied in a PG-SOT223 package, suitable for surface mounting. The device operates within a temperature range of -55°C to 150°C.
The BSP129 is also dv/dt rated and available with a VGS(th) indicator on reel, aiding in production and quality control. Its robust design and specifications make it a suitable component for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
240V minimum.
PG-SOT223.
-55°C to 150°C.
0.35A at 25°C ambient.
-2.1V to -1V.
6.5Ω at VGS=0V, 4.2Ω at VGS=10V.
Yes, halogen-free.