| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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105 pcs
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105 pcs | On Request | 1 | On Request | On Request | 1211+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSP125L6327 is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 600V and a continuous drain current of 120mA at 25°C. The device offers a maximum on-resistance of 45 Ohm at Vgs = 10V and Id = 120mA, enabling efficient low-current switching. With a gate threshold voltage of 2.3V maximum and a gate charge of 6.6 nC, it is suitable for logic-level drive circuits. The input capacitance is 150 pF at Vds = 25V, contributing to moderate switching speeds. The MOSFET is housed in a surface-mount TO-261-4 (SOT-223) package, making it suitable for compact designs. The operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 1.8W. Typical applications include auxiliary power supplies, relay drivers, and high-voltage DC-DC converters where low current and high voltage are required.
The maximum drain-to-source voltage is 600V.
The continuous drain current is 120mA at 25°C.
The package is TO-261-4 (SOT-223) with supplier device package PG-SOT223-4-21.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 2.3V at Id = 94 µA.
The maximum on-resistance is 45 Ohm at Vgs = 10V and Id = 120mA.
RoHS status is not specified in the available data.