| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,880 pcs
|
1880 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The BSO615N is a dual N-Channel MOSFET from Infineon Technologies, featuring a logic-level gate for low-voltage drive. It is designed for surface-mount applications in an 8-SOIC package.
Key electrical specifications include a drain-source breakdown voltage of 60V, continuous drain current of 2.6A, and maximum on-resistance of 150mOhm at Vgs=4.5V. The device offers a maximum gate charge of 20nC at 10V and input capacitance of 380pF at 25V.
With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for a variety of switching and amplification applications. The logic-level gate feature allows direct drive from low-voltage logic circuits.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.33 | $0.33 |
| 5,000+ | $0.31 | $0.31 |
| 7,500+ | $0.30 | $0.30 |
| 12,500+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
2.6A.
150mOhm at 2.6A and 4.5V gate drive.
2V at 20µA drain current.
-55°C to 150°C.
RoHS3 compliant (unverified).
8-SOIC surface mount package.