| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
122 pcs
|
122 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Id) (Maximum @ P-Channel, Ta) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) (Maximum @ P-Channel, Vgs=10 V) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) (Maximum @ P-Channel, Vds=25 V) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) (Maximum @ N-Channel, Id=3 A, Vgs=10 V) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) (Maximum @ P-Channel, Id=450 µA) | |
| Vgs(th) (Max) @ Id |
The BSO612CVG is a complementary MOSFET array from Infineon Technologies, combining both N-channel and P-channel MOSFETs in a single 8-SOIC surface-mount package. This configuration allows designers to implement push-pull or half-bridge topologies with a single component, simplifying board layout and reducing component count.
Key electrical specifications include a maximum drain-to-source voltage of 60V for both channels. The N-channel MOSFET supports a continuous drain current of 3A, while the P-channel supports 2A. On-resistance is rated at 120mOhm maximum for the N-channel at 3A and 10V gate drive, and 300mOhm maximum for the P-channel at 2A and 10V gate drive. Gate charge is 15.5nC (N-channel) and 16nC (P-channel) at 10V, and input capacitance is 340pF (N-channel) and 400pF (P-channel) at 25V drain-to-source voltage.
The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2W at ambient temperature. The surface-mount 8-SOIC package (PG-DSO-8) is suitable for automated assembly and space-constrained designs.
This complementary MOSFET array is suitable for a variety of switching and amplification applications where both N-channel and P-channel devices are needed, such as level shifting, load switching, and DC-DC converter output stages.
The maximum drain-to-source voltage (Vdss) is 60V.
The BSO612CVG is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, with a supplier device package of PG-DSO-8.
The operating junction temperature range is -55°C to 150°C.
The BSO612CVG is marked as RoHS3 compliant, but this status is unverified and should be confirmed with official documentation.
The N-channel MOSFET supports a continuous drain current of 3A, and the P-channel supports 2A.
The maximum on-resistance is 120mOhm for the N-channel at 3A and 10V gate drive, and 300mOhm for the P-channel at 2A and 10V gate drive.
The maximum power dissipation is 2W at ambient temperature.