| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,450 pcs
|
1450 pcs | On Request | 1 | On Request | On Request | 0639+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon BSO4420 is a single N-Channel MOSFET designed for fast switching applications. It features a 30V drain-source voltage rating and a continuous drain current of 13A at 25°C. The device offers a very low on-resistance of 7.8mΩ (max) at Vgs=10V and 13A, with a typical value of 6.7mΩ. For logic level drive at 4.5V, the on-resistance is 9.3mΩ typical, 10.9mΩ maximum.
This MOSFET is avalanche rated with a single pulse avalanche energy of 230mJ and a reverse diode dv/dt rating of 6kV/µs, making it robust for inductive load switching. Gate charge characteristics include a total gate charge of 33.7nC (max) at Vgs=5V, with gate-to-source charge of 4.9nC and gate-to-drain charge of 12.8nC typical. Input capacitance is 2213pF, output capacitance 740pF, and reverse transfer capacitance 165pF.
The device is housed in an 8-SOIC surface mount package (PG-DSO-8) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation at 25°C is 2.5W. Thermal resistance junction-to-ambient is 110K/W with a minimum footprint and 50K/W with a 6cm² cooling area.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.42 | $0.42 |
| 5,000+ | $0.39 | $0.39 |
| 7,500+ | $0.38 | $0.38 |
| 12,500+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30 V.
The maximum continuous drain current (Id) is 13 A at 25°C.
The drain-source on-resistance (Rds(on)) is 7.8 mΩ maximum at Vgs=10V and Id=13A; 9.3 mΩ typical at Vgs=4.5V and Id=11A.
The device comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package, supplier device package PG-DSO-8.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is marked as RoHS3 Compliant, but this is unverified (low confidence).
The gate threshold voltage (Vgs(th)) is 2 V maximum at Id=80µA, with typical values around 1.6 V.