| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,520 pcs
|
8520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Current | |
| Avalanche Energy | |
| Configuration | |
| Continuous Drain Current (Maximum @ VGS=4.5 V, TA=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Maximum @ VGS=4.5 V, ID=6.9 A) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Resistance | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance (Junction-Ambient) | |
| Thermal Resistance Junction-Soldering Point | |
| Vgs(th) (Max) @ Id |
The Infineon BSO220N03MDGXUMA1 is a dual N-channel MOSFET array from the OptiMOS 3 M-Series, designed for high-frequency switching applications. It features a drain-source breakdown voltage of 30V and a continuous drain current of 7.7A at 10V gate drive. The device offers a low on-resistance of 22mΩ at 10V gate drive and 27mΩ at 4.5V gate drive, making it suitable for low-voltage power conversion.
The MOSFET array includes logic-level gate drive capability, allowing direct interfacing with 5V logic. It is 100% avalanche tested and features low gate charge (5nC) for efficient switching. The device is housed in a PG-DSO-8 surface-mount package and is RoHS compliant and halogen-free.
Typical applications include notebook power supplies, VGA modules, and point-of-load (POL) converters. The dual-channel configuration saves board space and simplifies layout in compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.39 | $1.39 |
| 10+ | $0.86 | $0.86 |
| 100+ | $0.57 | $0.57 |
| 500+ | $0.44 | $0.44 |
| 1,000+ | $0.39 | $0.39 |
| 2,500+ | $0.34 | $0.34 |
| 5,000+ | $0.31 | $0.31 |
| 10,000+ | $0.30 | $0.30 |
| 25,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V (minimum).
The continuous drain current is 7.7A at VGS=10V and TA=25°C, and 6.9A at VGS=4.5V and TA=25°C.
The drain-source on-resistance is 22mΩ maximum at VGS=10V and ID=7.7A, and 27mΩ maximum at VGS=4.5V and ID=6.9A.
It is available in a PG-DSO-8 surface-mount package (8-SOIC, 0.154" width).
Yes, the device is RoHS compliant and has Pb-free plating.
The operating and storage temperature range is -55°C to 150°C.
The gate threshold voltage is 1V minimum and 2.1V maximum at ID=250µA.