| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs(th) (Max) @ Id |
The BSO215C is a dual N- and P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a logic level gate, enabling direct driving from low-voltage logic circuits. The device is rated for a drain-source voltage of 20V for both channels and a continuous drain current of 3.7A (N-channel) and -3.7A (P-channel) at 25°C ambient.
Key electrical characteristics include a low drain-source on-resistance of 100 mΩ maximum at Vgs=10V for both channels, and typical gate threshold voltages of 1.5V (N-channel) and -1.5V (P-channel). The device is avalanche rated with a single pulse avalanche energy of 26 mJ (N-channel) and 68 mJ (P-channel). It also features a reverse diode dv/dt rating of 6 kV/µs.
The BSO215C is surface mountable in an 8-SOIC package (0.154", 3.90mm Width) with a supplier device package of 8-SO. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2W at 25°C ambient. Thermal resistance junction-to-ambient is 110 K/W for N-channel and 100 K/W for P-channel with minimum footprint.
This MOSFET is suitable for power management applications in compact designs, such as DC-DC converters, load switches, and battery protection circuits. The dual complementary channel configuration simplifies circuit design for half-bridge and push-pull topologies.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.39 | $0.39 |
| 5,000+ | $0.36 | $0.36 |
| 7,500+ | $0.34 | $0.34 |
| 12,500+ | $0.34 | $0.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V for both N- and P-Channels.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction and storage).
Listed as RoHS3 Compliant (unverified low confidence).
3.7A for N-channel and -3.7A for P-channel at TA=25°C.
100 mΩ max at Vgs=10V for both N- and P-Channels.
N-channel: 1.2V min to 2V max; P-channel: -1V min to -2V max.