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BSO211P BSO211P is a dual P-channel power MOSFET from Infineon Technologies. It features a 20V drain-source voltage, 4.7A continuous drain current, and logic-level gate drive.
Mfr Part #:

BSO211P

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BSO211P is a dual P-channel power MOSFET from Infineon Technologies. It features a 20V drain-source voltage, 4.7A continuous drain current, and logic-level gate drive.
Total Stock: 2,333 pcs
$ Price Range: $0.25

BSO211P Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,333 pcs
2333 pcs On Request 1 On Request On Request On Request On Request On Request

BSO211P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

BSO211P Description

Short technical summary and product information.

The BSO211P is a dual P-channel power MOSFET manufactured by Infineon Technologies. It is designed for surface-mount applications and comes in an 8-SOIC package with a PG-DSO-8 supplier device package. This device features two P-channel MOSFETs in a single package, making it suitable for compact designs requiring multiple switching elements.

 

Key electrical specifications include a maximum drain-source voltage of 20V, a continuous drain current of 4.7A, and a maximum on-resistance of 67mOhm at 4.7A gate drive of 4.5V. The gate threshold voltage is 1.2V maximum at 25µA drain current, and the device supports logic-level gate drive for easy interfacing with low-voltage control signals. The maximum gate charge is 23.9nC at 4.5V, and input capacitance is 920pF at 15V drain-source voltage.

 

The device is rated for a maximum power dissipation of 2W and operates over a junction temperature range of -55°C to 150°C. It is RoHS3 compliant and REACH unaffected, with an MSL level of 1 (unlimited). The BSO211P is suitable for load switching, power management, and battery protection circuits in portable and industrial applications.

BSO211P Quick Information

Product Type: Dual P-Channel MOSFET Array
Canonical Name: Infineon BSO211P Dual P-Channel Power MOSFET
Subcategory: Dual P-Channel MOSFET

BSO211P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSO211P Estimated Pricing

Qty Low High
944+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSO211P Features

  • Dual P-channel MOSFET in single package.
  • 20V maximum drain-source voltage rating.
  • 4.7A continuous drain current capability.
  • 67mOhm on-resistance at 4.5V gate drive.
  • Logic-level gate threshold for low-voltage control.

BSO211P Applications

  • Used in load switching and power management.
  • Ideal for battery protection circuits.
  • Suitable for power multiplexing applications.
  • Common in portable and industrial designs.

BSO211P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the BSO211P?

-55°C to 150°C (junction temperature).

Is the BSO211P RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the package type of the BSO211P?

8-SOIC (0.154", 3.90mm Width) with PG-DSO-8 supplier package.

What is the maximum drain-source voltage?

20V.

What is the continuous drain current rating?

4.7A.

What is the gate threshold voltage?

1.2V maximum at 25µA.

What is the mounting type?

Surface mount.

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