| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,245 pcs
|
5245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSO201SPH is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for low-voltage power management applications. The device offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 12A at 25°C ambient temperature. The maximum on-resistance (Rds(on)) is 8 mOhm at a gate-source voltage of 4.5V and drain current of 14.9A. The gate threshold voltage is typically 1.2V at 250µA. The device features a maximum gate charge of 88 nC at 4.5V and input capacitance of 9600 pF at 15V drain-source voltage. The maximum power dissipation is 1.6W at 25°C ambient. The operating junction temperature range is -55°C to 150°C. The BSO201SPH is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package with a PG-DSO-8 supplier device package. It is suitable for load switching, battery protection, and DC-DC converter applications. The device is RoHS3 compliant and REACH unaffected, with an MSL level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.52 | $2.52 |
| 10+ | $1.60 | $1.60 |
| 100+ | $1.08 | $1.08 |
| 500+ | $0.87 | $0.87 |
| 1,000+ | $0.78 | $0.78 |
| 2,500+ | $0.73 | $0.73 |
| 5,000+ | $0.70 | $0.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20 V.
The continuous drain current (Id) is 12 A at Ta = 25°C.
The maximum on-resistance (Rds(on)) is 8 mOhm at Id = 14.9 A and Vgs = 4.5 V.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also known as PG-DSO-8.
Yes, it is listed as RoHS3 compliant, though this is unverified.
The maximum gate threshold voltage (Vgs(th)) is 1.2 V at Id = 250 µA.