Mfr Part #:

BSO110N03MSGXUMA1

Available from 1 distributors

Mfr Name: Infineon Technologies

N-Channel MOSFET, 30V drain-source voltage, 10A continuous drain current (steady state), surface mount 8-SOIC package.

✓ Total Stock: 11,020 pcs

$ Price Range: $0.28 - $1.20

BSO110N03MSGXUMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	11,020 pcs On Request	11020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSO110N03MSGXUMA1 Description

Short technical summary and product information.

The BSO110N03MSGXUMA1 is an N-Channel enhancement mode MOSFET from Infineon's OptiMOS 3 M-Series. It features a drain-source voltage rating of 30V and a continuous drain current of 10A at 25°C ambient (steady state) or 12.1A for 10 seconds. The device offers low on-resistance: 11 mOhm maximum at Vgs=10V and 13.9 mOhm maximum at Vgs=4.5V, making it suitable for 5V gate drive applications.

This MOSFET is optimized for high-frequency switching power supplies, notebook voltage regulators, and point-of-load converters. It is 100% avalanche tested with a single pulse avalanche energy rating of 20 mJ. The gate charge is 20 nC at Vgs=10V, and the input capacitance is 1100 pF typical.

The device is housed in a PG-DSO-8 package (8-SOIC, 0.154" width, 3.90mm body) and is surface mountable. It is RoHS3 compliant and halogen-free according to IEC61249-2-21. The operating junction temperature range is -55°C to 150°C.

BSO110N03MSGXUMA1 Quick Information

Product Type: MOSFET (Metal Oxide)

Series: OptiMOS 3 M-Series

Canonical Name: Infineon BSO110N03MSGXUMA1 N-Channel MOSFET

Subcategory: N-Channel MOSFET

BSO110N03MSGXUMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 3

REACH Status: REACH Unaffected

Lead Free: Yes

BSO110N03MSGXUMA1 Estimated Pricing

Qty	Low	High
1+	$1.20	$1.20
10+	$0.70	$0.70
100+	$0.49	$0.49
500+	$0.49	$0.49
2,500+	$0.49	$0.49
5,000+	$0.43	$0.43
10,000+	$0.42	$0.42
25,000+	$0.28	$0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSO110N03MSGXUMA1 Features

N-Channel MOSFET with 30V drain-source voltage.
Low on-resistance of 11 mOhm at 10V gate drive.
Optimized for 5V gate driver applications.
100% avalanche tested.
RoHS3 compliant and halogen-free.

BSO110N03MSGXUMA1 Applications

Ideal for notebook voltage regulator modules.
Suitable for point-of-load converters.
Used in high-frequency switching power supplies.

BSO110N03MSGXUMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

30V.

What package is this MOSFET available in?

8-SOIC (0.154", 3.90mm Width) also known as PG-DSO-8.

What is the operating temperature range?

-55°C to 150°C (junction).

Is this MOSFET RoHS compliant?

Yes, RoHS3 compliant and halogen-free.

What is the gate threshold voltage?

1V minimum, 2V maximum at Id=250µA.

What is the maximum continuous drain current?

10A at Ta=25°C steady state, 12.1A for 10 seconds.

What is the on-resistance?

11 mOhm maximum at Vgs=10V, Id=12.1A; 13.9 mOhm maximum at Vgs=4.5V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	1100 pF (typ), 1500 pF (max)
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs	9.2 mOhm (typ) / 11 mOhm (max)
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	PG-DSO-8
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	1 V (min), 2 V (max)