| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,152 pcs
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1152 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel | |
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| Vgs(th) (Max) @ Id |
The Infineon BSO080P03SHXUMA1 is a P-Channel enhancement mode MOSFET from the OptiMOS-P family, designed for high efficiency and low voltage applications. It is rated for a drain-source voltage of -30V and a continuous drain current of 12.6A (steady state at 25°C) with a maximum pulsed drain current of -60A. The device features a low maximum on-resistance of 8 mΩ at Vgs = -10V, with a typical value of 6.7 mΩ. Electrical characteristics include a gate threshold voltage range of -1V to -2.2V and a total gate charge of 136 nC maximum. Input capacitance is 5890 pF, output capacitance 1570 pF, and reverse transfer capacitance 1500 pF (max). Switching times are fast with typical turn-on delay of 15 ns, rise time 22 ns, turn-off delay 130 ns, and fall time 110 ns. The MOSFET is housed in an 8-SOIC (PG-DSO-8) surface mount package with gull wing leads. Operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 2.5W for 10 seconds and 1.79W steady state at 25°C. Thermal resistance from junction to ambient is 110 K/W (minimal footprint, 10s). The device is RoHS compliant and halogen-free according to IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.63 | $2.63 |
| 10+ | $1.69 | $1.69 |
| 100+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -30V minimum.
The MOSFET is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also known as PG-DSO-8.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant and halogen-free according to IEC61249-2-21.
The continuous drain current at 25°C is -14.9A for 10 seconds and -12.6A steady state. At 70°C, it is -11.9A for 10 seconds and -10A steady state.
The maximum drain-source on-state resistance is 8 mΩ at Vgs = -10V and Id = -14.9A, with typical value of 6.7 mΩ.
The gate threshold voltage ranges from -1V minimum to -2.2V maximum, with typical -1.5V at Id = -250 μA.