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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSO051N03MSGXUMA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 14A. The device offers a low on-resistance of 5.1mOhm maximum at 18A and 10V gate drive, making it suitable for efficient power switching applications.
This MOSFET is housed in an 8-SOIC surface mount package (PG-DSO-8) and operates over a junction temperature range of -55°C to 150°C. The gate threshold voltage is 2V maximum at 250µA drain current, and the maximum gate-source voltage is ±20V. Input capacitance is 3200pF at 15V drain-source voltage.
Designed for small signal and power management circuits, the BSO051N03MSGXUMA1 is RoHS3 compliant and has an MSL rating of 1 (unlimited). It is suitable for use in a variety of low-voltage, medium-current applications where space is constrained.
30V.
14A.
5.1mOhm maximum at 18A drain current and 10V gate-source voltage.
8-SOIC (0.154", 3.90mm Width) surface mount package, also known as PG-DSO-8.
-55°C to 150°C.
RoHS3 compliant (unverified).
2V maximum at 250µA drain current.