| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,268 pcs
|
1268 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Rds On (Max) @ Id, Vgs | |
| Tape & Reel |
The BSO051N03MSG from Infineon Technologies is a high-efficiency N-channel MOSFET designed for power management applications. It features a low on-resistance of 5.1 mOhm at 18A and 10V Vgs, with a drain-source breakdown voltage of 30V.
This MOSFET integrates a driver circuit, enabling fast switching speeds and low power dissipation. It is housed in a compact SOP8 package, suitable for space-saving designs. The component is RoHS compliant and designed for long operational life with high thermal performance.
Ideal for DC-DC conversion and motor control circuits, the BSO051N03MSG offers high integration, reducing component count and improving product competitiveness. Its performance meets industry standards and it is compatible with standard SOP8 footprints.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.76 | $1.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The maximum on-resistance is 5.1 mOhm at 18A and 10V Vgs.
The BSO051N03MSG is supplied in an SOP8 package.
Yes, the BSO051N03MSG is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
Yes, the REACH Status is Unaffected.