| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | 656C02 | On Request | On Request |
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| SVHC Present |
The Infineon Technologies BSO033N03MSG is a high-efficiency MOSFET designed for various power management applications. It features a drain-source breakdown voltage of 30V and a low on-resistance of 5.1 mOhm at a gate-source voltage of 10V and a drain current of 18A. The MOSFET is housed in a standard SOP8 package, making it suitable for space-constrained designs.
This component offers integrated driver circuitry and fast switching speeds, contributing to efficient power conversion. Its performance characteristics make it suitable for applications such as DC-DC converters and motor control circuits. The BSO033N03MSG is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for standard industrial handling.
Key electrical specifications include a maximum drain-source voltage of 30V and a maximum on-resistance of 5.1 mOhm. The drive voltage range is specified from 4.5V to 10V. The SOP8 package ensures compatibility with standard PCB footprints and facilitates efficient thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum on-resistance is 5.1 mOhm at 18A and 10V.
The BSO033N03MSG is supplied in an SOP8 package.
Yes, the BSO033N03MSG is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.