| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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345 pcs
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345 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BSM35GP120 is a high-performance IGBT module suitable for various power electronic applications. It offers a robust design with a maximum collector-emitter voltage of 1200V and a nominal DC collector current of 35A at 80°C.
This module provides a total power dissipation of 230W at 25°C, making it suitable for demanding applications. Key electrical characteristics include a gate-emitter voltage rating of ±20V and a collector-emitter saturation voltage typically between 2.4V and 2.85V at 35A.
The BSM35GP120 also includes integrated diodes with specific ratings for rectifier and inverter functions, such as a repetitive peak reverse voltage of 1600V and RMS forward current of 40A per chip. The module's insulation test voltage is rated at 2.5kV.
Designed for power switching, this IGBT module is a reliable component for inverters, brake choppers, and other power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the BSM35GP120 is 1200 V.
The nominal DC collector current (IC,nom) for the BSM35GP120 at 80°C is 35 A.
The total power dissipation (Ptot) for the BSM35GP120 at 25°C is 230 W.
The gate-emitter peak voltage (VGES) for the BSM35GP120 is ±20 V.
The RMS forward current per chip (IFRMSM) for the rectifier diode is 40 A.
The insulation test voltage (VISOL) for the BSM35GP120 is 2.5 kV.
The typical collector-emitter saturation voltage (VCE sat) is between 2.4 V and 2.85 V.