| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40 pcs
|
40 pcs | On Request | 5 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Mounting Style | |
| Package / Case | |
| Power Dissipation | |
| Product Type | |
| Storage Temperature | |
| Tape & Reel | |
| Technology |
The Infineon BSM100GB120DN2 is an IGBT module featuring a Half Bridge configuration. It offers a maximum collector-emitter voltage of 1200V and a typical continuous collector current of 150A at 25°C.
This module operates within a temperature range of -40°C to +150°C and has a power dissipation of 800W. It is designed for chassis mounting and comes in a Tray package.
Key electrical specifications include a typical collector-emitter saturation voltage of 2.5V and a maximum gate-emitter voltage of 20V. The technology used is Silicon (Si).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200 V.
The continuous collector current at 25°C is 150 A.
The operating temperature range is from -40°C to +150°C.
The package type is Tray.
It is designed for chassis mounting.