| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,147 pcs
|
3147 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Features | |
| Halogen Free | |
| Input Capacitance | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time | |
| Tape & Reel |
The Infineon BSL606SN is a high-performance N-channel MOSFET from the OptiMOS™-3 family, designed for small signal and small power applications. It operates in enhancement mode and is rated for logic-level gate drive at 4.5V.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a continuous drain current of up to 4.5A at 25°C ambient temperature. The on-state resistance is as low as 60mΩ at VGS=10V and ID=4.5A, and 95mΩ at VGS=4.5V and ID=3.6A, making it suitable for efficient power switching.
This MOSFET is avalanche rated and qualified according to AEC Q101 standards, ensuring reliability in demanding applications. It features a gate threshold voltage ranging from 1.3V to 2.3V. Dynamic characteristics include input capacitance of up to 657pF and output capacitance of up to 174pF.
The BSL606SN is supplied in a PG-TSOP-6 package, suitable for surface mounting. It is offered in tape and reel packaging with 3000 pieces per reel. The device is 100% lead-free, halogen-free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The maximum continuous drain current is 4.5A at 25°C.
The gate threshold voltage is typically 1.8V.
The maximum on-resistance is 95mΩ at VGS=4.5V and ID=3.6A.
The BSL606SN is available in the PG-TSOP-6 package.
Yes, the BSL606SN is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.