| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BSL316CH6327 is a versatile MOSFET array featuring both N-Channel and P-Channel transistors within a single package. This component is rated for a maximum drain-source voltage of 30V and can handle a continuous drain current of 1.5A. Its on-resistance is specified at 160mΩ at 10V gate-source voltage, with a typical gate threshold voltage of 2V.
The array includes specifications for input capacitance (Ciss) of 282pF, output capacitance (Coss) of 91pF, and reverse transfer capacitance (Crss) of 84pF. The gate charge (Qg) is 600pC at 5V. Power dissipation is rated at 500mW, and the operating temperature range is from -55℃ to +150℃.
This MOSFET array is supplied in a surface-mount TSOP-6 package, making it suitable for integration into compact electronic designs. The combination of N-Channel and P-Channel FETs in one unit simplifies circuit design and reduces component count for applications requiring complementary switching or level shifting.
Key electrical characteristics include a typical gate threshold voltage of 2V and a typical on-resistance of 160mΩ at 10V. The device is designed for efficient power management and signal switching in a variety of electronic circuits.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
1.5A.
160mΩ at 10V gate drive.
2V.
500mW.
-55°C to +150°C.
TSOP-6 surface-mount package.