| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The BSL215PL6327 is a dual P-Channel enhancement mode MOSFET from Infineon Technologies, designed for low-voltage switching applications. It integrates two independent P-Channel MOSFETs in a single surface-mount package, offering space savings and simplified PCB layout.
Key electrical specifications include a maximum drain-source voltage of 20V, continuous drain current of 1.5A, and a low on-resistance of 150mOhm at Vgs=4.5V. The logic level gate threshold (maximum 1.2V at Id=11µA) allows direct drive from low-voltage logic circuits. Gate charge is 3.55nC at Vgs=4.5V, and input capacitance is 346pF at Vds=15V, enabling efficient switching at moderate frequencies. Maximum power dissipation is 500mW.
The device is housed in a SOT-23-6 Thin / TSOT-23-6 package (supplier package PG-TSOP6-6) and supports surface mount assembly. Operating junction temperature range is -55°C to 150°C, suitable for industrial and automotive environments. The dual configuration is ideal for applications requiring complementary or independent P-Channel switches, such as load switching, power management, and DC-DC converter output stages.
20 V.
1.5 A.
150 mOhm maximum at Vgs=4.5V and Id=1.5A.
3.55 nC maximum at Vgs=4.5V.
-55°C to 150°C (junction).
SOT-23-6 Thin, TSOT-23-6 (supplier package PG-TSOP6-6).
RoHS3 compliant (unverified, low confidence).