| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The Infineon BSL215C is a small signal MOSFET featuring complementary P and N channels in an enhancement mode configuration. It is designed for super logic level applications with a 2.5V rating.
Key electrical characteristics include a drain-source breakdown voltage of up to 20V and low on-state resistance, with typical values as low as 102 mΩ for the P-channel and 108 mΩ for the N-channel at specified currents and gate voltages. The device is avalanche rated and qualified according to AEC Q101.
Packaged in a PG-TSOP-6, the BSL215C is suitable for surface mounting. It is 100% lead-free and RoHS compliant, as well as halogen-free according to IEC61249-2-21.
This MOSFET is designed for various applications requiring efficient switching and signal control.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20V for the P-channel and 20V for the N-channel.
The typical gate threshold voltage is -0.9V for the P-channel and 0.95V for the N-channel.
The maximum continuous drain current is 1.5A for the N-channel and -1.5A for the P-channel at 25°C.
The typical on-state resistance is 163 mΩ for the P-channel at VGS=-2.5V, ID=-1.1A and 173 mΩ for the N-channel at VGS=2.5V, ID=0.7A.
The BSL215C is available in a PG-TSOP-6 package.
Yes, the BSL215C is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.