| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,985 pcs
|
28985 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Operating Temperature | |
| Power Dissipation | |
| Tape & Reel | |
| Thermal Resistance |
The BSL215C is a small signal MOSFET from VBsemi, featuring complementary P and N channels in an enhancement mode configuration. This device is designed for super logic level applications, rated for 2.5V.
Key electrical characteristics include a drain-source breakdown voltage of ±20V and a gate threshold voltage ranging from -1.2V to -0.6V for the P-channel and 0.7V to 1.2V for the N-channel. The on-state resistance (RDS(on)) is as low as 140mΩ (N-channel) at VGS=4.5V, ID=1.5A and 150mΩ (P-channel) at VGS=-4.5V, ID=-1.5A. It also boasts avalanche rating and is qualified according to AEC Q101.
The BSL215C is supplied in a PG-TSOP6 package, suitable for surface mounting. It is provided on tape and reel with a standard package quantity of 3000 pieces. The component is 100% lead-free and RoHS compliant, as well as halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is ±20V.
The gate threshold voltage for the P-channel ranges from -1.2V to -0.6V.
The gate threshold voltage for the N-channel ranges from 0.7V to 1.2V.
The maximum continuous drain current at 25°C is 1.5A for the N-channel and -1.5A for the P-channel.
The maximum on-state resistance for the N-channel at VGS=4.5V and ID=1.5A is 140mΩ.
The BSL215C is supplied in a PG-TSOP6 package.
Yes, the BSL215C is RoHS3 compliant.