| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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664 pcs
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664 pcs | On Request | 1 | On Request | On Request | 0930+PBF | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The BSL214NL6327 is a dual N-Channel logic level MOSFET manufactured by Infineon Technologies. It is designed for small signal and low power applications requiring two independent MOSFETs in a single package. The device offers a drain-source voltage rating of 20V and continuous drain current of 1.5A, with a maximum on-resistance of 140 mOhm when driven at 4.5V. The logic level gate feature allows direct interfacing with low-voltage control logic, reducing the need for additional level shifting circuitry.
Key electrical characteristics include a gate threshold voltage of 1.2V maximum, low gate charge of 0.8 nC, and input capacitance of 143 pF, making it suitable for high-speed switching applications. The power dissipation is rated at 500 mW, and the device can operate over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a compact SOT-23-6 Thin / TSOT-23-6 surface mount package (supplier device package PG-TSOP6-6), enabling space-efficient designs in portable and battery-powered devices. The dual configuration saves board space compared to using two discrete MOSFETs.
The drain-source voltage (Vdss) is 20V.
The continuous drain current is 1.5A.
The maximum on-resistance is 140 mOhm at 1.5A and 4.5V gate drive.
The junction temperature range is -55°C to 150°C.
The package is SOT-23-6 Thin, also known as TSOT-23-6, with supplier device package PG-TSOP6-6.
It is marked as RoHS3 Compliant, but this is unverified.
The maximum gate threshold voltage is 1.2V at 3.7µA drain current.