BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The BSL214N by VBsemi is a Dual N+N channel MOSFET designed for various electronic applications. This component features a Trench Technology construction, providing efficient performance.
Key electrical specifications include a Drain-Source Voltage (Vds) of 20V and a Gate-Source Voltage (Vgs) of ±12V. The continuous Drain Current (Id) is rated at 6A, and the typical Gate Threshold Voltage (Vth) ranges from 0.5V to 1.5V. The Drain-Source On-Resistance (RDS) is specified as 22mΩ at 4.5V.
This MOSFET is housed in a compact SOT23-6 package, suitable for surface mount applications. The N+N channel configuration makes it versatile for switching and amplification tasks in electronic circuits.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (Vds) for the BSL214N is 20V.
The Gate-Source Voltage (Vgs) for the BSL214N is ±12V.
The typical Gate Threshold Voltage (Vth) of the BSL214N is between 0.5V and 1.5V.
The Continuous Drain Current (Id) for the BSL214N is 6A.
The Drain-Source On-Resistance (RDS) at 4.5V for the BSL214N is 22mΩ.
The BSL214N MOSFET is supplied in a SOT23-6 package.