BSL211SPL6327 BSL211SPL6327 is a P-Channel enhancement mode MOSFET from Infineon, rated for -20V drain-source voltage and -4.7A continuous drain current. It features low on-resistance of 67mΩ maximum and comes in a P-TSOP6-6 surface mount package.
Mfr Part #:

BSL211SPL6327

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BSL211SPL6327 is a P-Channel enhancement mode MOSFET from Infineon, rated for -20V drain-source voltage and -4.7A continuous drain current. It features low on-resistance of 67mΩ maximum and comes in a P-TSOP6-6 surface mount package.
✓ Total Stock: 45,140 pcs

BSL211SPL6327 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
34,000 pcs
34000 pcs On Request 1 On Request On Request 08+PB On Request On Request
Non-Authorised Inventory information
11,140 pcs
11140 pcs On Request 1 On Request On Request 0828+ On Request On Request

BSL211SPL6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BSL211SPL6327 Description

Short technical summary and product information.

The BSL211SPL6327 is a P-Channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS-P small-signal transistor family. It is designed for low-voltage power management applications, offering a drain-source breakdown voltage of -20V and a continuous drain current of -4.7A at 25°C ambient temperature. The device features a maximum drain-source on-resistance of 67mΩ at VGS=-4.5V and ID=-4.7A, with a typical value of 54mΩ, enabling efficient power switching.

 

This MOSFET is rated as Super Logic Level, meaning it can be driven at gate-source voltages as low as 2.5V, making it suitable for battery-powered and low-voltage logic circuits. The gate threshold voltage ranges from -0.6V to -1.2V, allowing for straightforward interface with microcontrollers and other low-voltage drivers. The device also supports a maximum gate-source voltage of ±12V and offers a total gate charge of 12.4nC maximum, contributing to fast switching performance.

 

The BSL211SPL6327 is avalanche rated and has a reverse diode dv/dt rating of -6kV/µs, providing robustness in inductive load switching applications. It operates over a junction temperature range of -55°C to 150°C and dissipates up to 2W at 25°C ambient. The device is qualified to AEC Q101, making it suitable for automotive applications.

 

Packaged in the compact P-TSOP6-6 (TSOT-23-6) surface mount package, the BSL211SPL6327 is supplied in tape and reel format with 3000 pieces per reel. It features Pb-free lead plating and is RoHS compliant, supporting environmentally conscious manufacturing requirements.

BSL211SPL6327 Quick Information

Product Type: P-Channel MOSFET
Series: OptiMOS-P
Canonical Name: P-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

BSL211SPL6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free

BSL211SPL6327 Features

  • P-Channel enhancement mode MOSFET design.
  • Super Logic Level 2.5V gate drive capability.
  • Low 67mΩ maximum drain-source on-resistance.
  • Avalanche rated for robust inductive switching.
  • AEC Q101 qualified for automotive applications.

BSL211SPL6327 Applications

  • Ideal for low-voltage load switching circuits.
  • Used in battery-powered portable electronics.
  • Suitable for DC-DC converter power stages.
  • Applied in automotive electronic control units.

BSL211SPL6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSL211SPL6327?

The drain-source breakdown voltage is -20V (minimum).

What is the maximum continuous drain current?

The continuous drain current is -4.7A at TA=25°C and -3.8A at TA=70°C.

What is the on-resistance of this MOSFET?

The drain-source on-resistance is 54mΩ typical and 67mΩ maximum at VGS=-4.5V and ID=-4.7A. At VGS=-2.5V and ID=-3.7A, it is 94mΩ typical and 110mΩ maximum.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSL211SPL6327 RoHS compliant?

Yes, the device is RoHS compliant with Pb-free lead plating, as stated in the datasheet.

What package is the BSL211SPL6327 available in?

The device comes in a P-TSOP6-6 surface mount package, which is equivalent to TSOT-23-6.

What is the gate threshold voltage?

The gate threshold voltage ranges from -0.6V minimum to -1.2V maximum, with a typical value of -0.9V.

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