| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,325 pcs
|
7325 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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The Infineon Technologies BSL207SP H6327 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 20V and a continuous drain current of 6A, making it suitable for power switching and amplification tasks.
Key electrical characteristics include a low drain-source on-resistance of 29 mOhms and a gate-source threshold voltage of 1.2V. The MOSFET operates with a gate-source voltage of up to 12V and has a power dissipation rating of 2W. Its operating temperature range spans from -55C to +150C, ensuring reliability in diverse environmental conditions.
This component is housed in a TSOP-6 package, designed for surface-mount (SMD/SMT) applications. It is supplied on a reel, with a factory pack quantity of 3000 units. The technology used is Silicon (Si), and it functions as a single-channel enhancement mode MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 6A.
The drain-source breakdown voltage is 20V.
The drain-source on-resistance is 29 mOhms.
The minimum operating temperature is -55C and the maximum is +150C.
It comes in a TSOP-6 package.
The gate-source threshold voltage is 1.2V.
It is supplied on a reel.