| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | 18+HF | On Request | On Request |
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| Halogen Free | |
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| Lead Style | |
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| Tape & Reel | |
| Technology |
The Infineon Technologies BSL207SP H6327 is a P-Channel MOSFET belonging to the small signal category. It offers a drain-source breakdown voltage of 20V and a continuous drain current of 6A, with a low drain-source on-resistance of 29 mOhms.
This MOSFET operates with a gate-source threshold voltage of 1.2V and a maximum gate-source voltage of 12V. It has a power dissipation rating of 2W and a gate charge of -20 nC. The device is constructed using Silicon technology and features an enhancement channel mode.
Packaged in a TSOP-6 surface-mount (SMD/SMT) case, the BSL207SP H6327 is supplied on a reel. It is designed for operation within a temperature range of -55°C to +150°C.
This component is suitable for various electronic circuits requiring a P-Channel MOSFET with these specific electrical and thermal characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The continuous drain current is 6A.
The drain-source on-resistance is 29 mOhms.
The gate-source threshold voltage is 1.2V.
The operating temperature range is from -55°C to +150°C.
The MOSFET is in a TSOP-6 package.