| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,025 pcs
|
23025 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The BSL207SP H6327 from Infineon Technologies is a P-Channel MOSFET suitable for various electronic applications. This component offers a drain-source breakdown voltage of 20V and a continuous drain current of 6A, with a low drain-source on-resistance of 29 mOhms.
Designed for small signal applications, it operates within a temperature range of -55C to +150C. The gate-source voltage is rated at 12V, and it has a gate charge of -20 nC. The MOSFET features enhancement mode channel operation.
Packaged in a TSOP-6 surface-mount case, the BSL207SP H6327 is supplied on a reel. Its dimensions are 4.4mm in height, 10mm in length, and 9.25mm in width. The technology used is Silicon (Si).
Key electrical characteristics include a minimum forward transconductance of 7 S, a fall time of 53 ns, and a rise time of 17 ns. Typical turn-on delay time is 9 ns, and typical turn-off delay time is 42 ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The continuous drain current is 6A.
The drain-source on-resistance is 29 mOhms.
The gate-source threshold voltage is 1.2V.
The operating temperature range is -55C to +150C.
The MOSFET is in a TSOP-6 package.
The RoHS status is RoHS3 Compliant.