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BSL205NL6327 Infineon BSL205NL6327 is a dual N-channel logic level MOSFET with 20V drain-source voltage and 2.5A continuous drain current. It features low on-resistance of 50mOhm and is housed in a surface mount TSOP6-6 package.
Mfr Part #:

BSL205NL6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BSL205NL6327 is a dual N-channel logic level MOSFET with 20V drain-source voltage and 2.5A continuous drain current. It features low on-resistance of 50mOhm and is housed in a surface mount TSOP6-6 package.
✓ Total Stock: 47,922 pcs

BSL205NL6327 Available from 1 distributor

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47,922 pcs
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BSL205NL6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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BSL205NL6327 Description

Short technical summary and product information.

The BSL205NL6327 from Infineon Technologies is a dual N-channel MOSFET designed for small signal switching applications. It features two independent N-channel MOSFETs in a single package, configured as a common-source pair.

 

With a drain-source voltage rating of 20V and continuous drain current of 2.5A, this MOSFET offers a maximum on-resistance of 50mOhm at 4.5V gate drive. The logic level gate threshold allows direct drive from low-voltage logic circuits. Gate charge is 3.2nC, and input capacitance is 419pF, enabling efficient switching at moderate frequencies.

 

The device is supplied in a surface mount SOT-23-6 Thin / TSOT-23-6 package, with supplier device package designation PG-TSOP6-6. It operates over a junction temperature range of -55°C to 150°C and has a power dissipation of 500mW.

 

This dual MOSFET is suitable for load switching, power management, and signal routing in portable and battery-powered devices. The logic level gate feature simplifies interface with microcontrollers and other low-voltage logic.

BSL205NL6327 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: Infineon Technologies BSL205NL6327 Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

BSL205NL6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSL205NL6327 Features

  • Dual N-channel MOSFET in one package.
  • 20V drain-source voltage rating.
  • 2.5A continuous drain current.
  • Logic level gate for low voltage drive.
  • Surface mount TSOP6-6 package.

BSL205NL6327 Applications

  • Load switching in portable electronics.
  • Power management for battery devices.
  • Signal routing in low voltage circuits.
  • Interfacing with microcontroller outputs.

BSL205NL6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSL205NL6327?

20 V.

What is the maximum drain current?

2.5 A.

What is the on-resistance of this MOSFET?

50 mOhm maximum at Id=2.5A and Vgs=4.5V.

What package is the BSL205NL6327 available in?

SOT-23-6 Thin, TSOT-23-6 (PG-TSOP6-6).

What is the operating temperature range?

-55°C to 150°C.

Is the BSL205NL6327 RoHS compliant?

RoHS3 compliant (unverified).

Does this MOSFET have a logic level gate?

Yes, it features a logic level gate.

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