| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 2019+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSH207,135 from NXP Semiconductors is a single P-Channel enhancement-mode MOSFET fabricated with Metal Oxide technology. It is designed for low-voltage load switching applications.
Key electrical characteristics include a drain-to-source voltage (Vdss) of 12V and a continuous drain current of 1.52A at ambient temperature. The on-resistance (Rds on) is a maximum of 120mOhm at Vgs=4.5V and Id=1A. Gate threshold voltage is typically 600mV at Id=1mA. The device can be driven with logic-level gate voltages of 1.8V and 4.5V.
This MOSFET is housed in a surface mount SC-74 (SOT-457) package with a supplier device package designation of 6-TSOP. Maximum power dissipation is 417mW at ambient temperature. Operating junction temperature range is -55°C to 150°C.
12V.
1.52A at ambient temperature (Ta).
Surface mount in SC-74/SOT-457 package (6-TSOP).
-55°C to 150°C junction temperature (TJ).
RoHS3 compliant.