| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,300 pcs
|
7300 pcs | On Request | 1 | On Request | On Request | 1722+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The NXP Semiconductors BSH205G2 is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.
Key electrical characteristics include a drain-source voltage of -20V and a gate-source voltage range of -8V to 8V. The device offers a low on-state resistance, with a maximum of 170 mΩ at a drain current of -2A and junction temperature of 25°C. It can handle a continuous drain current of up to -2.3A under specific conditions.
With an enhanced power dissipation capability of 890 mW, the BSH205G2 is suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. The device is AEC-Q101 qualified, indicating its suitability for demanding automotive and industrial environments.
Mounting is via surface mount technology. The small SOT23 package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is -20 V.
The maximum continuous drain current (Id) is -2 A at 25 °C ambient temperature.
The typical drain-source on-state resistance (Rds(on)) is 120 mΩ, with a maximum of 170 mΩ at VGS = -4.5 V and ID = -2 A.
The BSH205G2 is available in a TO-236AB (SOT23) surface-mount package.
The junction temperature range is -55 °C to +150 °C.