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BSH205,215

BSH205,215 is a P-channel enhancement mode MOSFET from NXP Semiconductors. It features a maximum drain-source voltage of 12V and continuous drain current of 0.75A at 25°C.

✓ Total Stock: 1,000 pcs

BSH205,215 Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	100	On Request	On Request	On Request	On Request	On Request

BSH205,215 Description

Short technical summary and product information.

The BSH205,215 is a P-channel enhancement mode power MOSFET manufactured by NXP Semiconductors (now Nexperia). Designed for low voltage logic level applications, it offers a maximum drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 0.75A at 25°C ambient temperature. The device features a very low threshold voltage (Vgs(th) typical -0.68V, minimum -0.4V), enabling direct drive from low voltage logic circuits.

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 400mΩ at Vgs = 4.5V and Id = 430mA, and 0.5Ω at Vgs = -2.5V. The gate charge is only 3.8nC at Vgs = 4.5V, supporting fast switching performance. Input capacitance (Ciss) is 200pF at Vds = 9.6V. Maximum power dissipation is 417mW at 25°C, derating to 170mW at 100°C. The device operates over the full industrial temperature range of -55°C to +150°C.

The BSH205,215 is supplied in the subminiature SOT23 surface mount package (also designated TO236AB), making it suitable for compact and portable designs. Its fast switching and logic level compatibility make it ideal for battery powered applications and high speed digital interfacing.

BSH205,215 Quick Information

Product Type: Single P-Channel MOSFET

Canonical Name: BSH205,215 P-Channel Enhancement Mode MOSFET

Subcategory: Single MOSFET

BSH205,215 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1

REACH Status: Compliant

BSH205,215 Features

P-channel enhancement mode MOSFET.
Maximum drain-source voltage 12V.
Continuous drain current 0.75A at 25°C.
Very low threshold voltage logic level compatible.
Subminiature SOT23 surface mount package.

BSH205,215 Applications

Battery powered portable electronics.
High speed digital interfacing circuits.
Low voltage load switching applications.
Power management in compact devices.

BSH205,215 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the BSH205,215?

The maximum drain-source voltage (Vdss) is 12V.

What is the continuous drain current rating of the BSH205,215?

The maximum continuous drain current is 0.75A at 25°C ambient temperature, derated to 0.47A at 100°C.

What is the operating temperature range of the BSH205,215?

The operating junction temperature range is -55°C to +150°C.

What is the gate threshold voltage of the BSH205,215?

The gate threshold voltage (Vgs(th)) is minimum -0.4V and typical -0.68V at Id = -1mA, Vds = Vgs.

What is the on-resistance of the BSH205,215?

The maximum on-resistance is 400mΩ at Vgs = 4.5V and Id = 430mA, and 0.5Ω at Vgs = -2.5V.

What package does the BSH205,215 come in?

The BSH205,215 is supplied in the SOT23 (TO236AB) subminiature surface mount package.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	NXP Semiconductors
Current	0.75 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.8 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	417 mW
Rds On (Max) @ Id, Vgs	400 mΩ
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	SOT-23 (TO-236AB)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	-0.4 V / -0.68 V