| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
73,000 pcs
|
73000 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request | |
|
209 pcs
|
209 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSH202 is a P-channel enhancement mode, logic level, field-effect power transistor manufactured by NXP Semiconductors. This device is designed with a low threshold voltage and extremely fast switching capabilities, making it an ideal choice for battery-powered applications and high-speed digital interfacing.
The BSH202 is supplied in a subminiature SOT-23 surface mounting package. Key electrical characteristics include a drain-source breakdown voltage of -30 V, a gate threshold voltage typically between -1 V and -1.9 V, and a low on-state resistance. The transistor also features fast switching times, with turn-on delay typically 2 ns and turn-off delay typically 45 ns.
This MOSFET is well-suited for applications requiring efficient power management and rapid signal response. Its compact SOT-23 package allows for space-saving designs in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -30 V.
The typical gate threshold voltage is -1.9 V.
The typical on-state resistance at VGS = -10 V and ID = -280 mA is 0.63 Ω.
The typical total gate charge is 2.9 nC.
The BSH202 is supplied in a SOT-23 subminiature surface mounting package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.