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BSH201215

The NXP Semiconductors BSH201215 is a P-channel enhancement mode MOSFET. It features a -60V drain-source voltage and a -300mA maximum drain current, housed in a SOT-23 package.

✓ Total Stock: 370,270 pcs

$ Price Range: $0.99

BSH201215 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	370,020 pcs On Request	370020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	200 pcs On Request	200 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	50 pcs On Request	50 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSH201215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors
Mounting Type	SMD
Operating Temperature Range	-55°C to +150°C
Power Dissipation	417mW

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BSH201215 Description

Short technical summary and product information.

The BSH201215 from NXP Semiconductors is a P-channel enhancement mode MOSFET designed for various electronic applications. This component offers a drain-source voltage rating of -60V and a maximum continuous drain current of -300mA. It is characterized by a low threshold voltage and fast switching capabilities, making it suitable for logic-level applications.

The MOSFET is supplied in a subminiature surface mount SOT-23 package, which is ideal for space-constrained designs. The operating temperature range is from -55°C to +150°C, providing robustness for demanding environments. The device is RoHS3 compliant.

Key electrical specifications include a typical threshold voltage of -1.9V and a maximum gate-source voltage of 20V. The power dissipation is rated at 417mW. Its P-channel polarity and enhancement mode operation are standard for this type of transistor.

This MOSFET is well-suited for general-purpose switching and amplification tasks where a P-channel device is required. The SOT-23 package facilitates easy integration into printed circuit boards using surface mount technology.

BSH201215 Quick Information

Product Type: MOSFET

Canonical Name: NXP Semiconductors BSH201215 P-Channel MOSFET

Subcategory: P Channel

BSH201215 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSH201215 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSH201215 Features

P-channel enhancement mode MOSFET.
60V drain-source voltage rating.
300mA maximum drain current.
Low threshold voltage.
SOT-23 subminiature surface mount package.

BSH201215 Applications

Suitable for low-current switching applications.
Ideal for portable electronic devices.
Used in power management circuits.
Applicable in logic-level switching scenarios.

BSH201215 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the BSH201215 MOSFET?

The drain-source voltage is -60V.

What is the maximum continuous drain current for the BSH201215?

The maximum continuous drain current is -300mA.

What is the typical threshold voltage of the BSH201215?

The typical threshold voltage is -1.9V.

What package type is the BSH201215 MOSFET supplied in?

The BSH201215 is supplied in a SOT-23 package.

What is the operating temperature range for the BSH201215?

The operating temperature range is -55°C to +150°C.