| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38 pcs
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38 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
This NXP Semiconductors BSH114,215 is an N-Channel MOSFET designed for general-purpose switching applications. It offers a maximum drain-source voltage of 100V and a continuous drain current of up to 500mA.
The MOSFET is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs. Its N-Channel enhancement mode construction provides efficient switching characteristics.
Key electrical parameters include a 100V breakdown voltage and a 500mA current capability. The SOT-23 package facilitates easy integration into printed circuit boards via surface mounting.
This component is ideal for various electronic circuits requiring a reliable N-Channel MOSFET with moderate voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the BSH114,215 is 100V.
The BSH114,215 has a continuous drain current rating of 500mA.
The BSH114,215 MOSFET is supplied in a SOT-23 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.