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BSH111,215 The NXP Semiconductors BSH111,215 is an N-channel MOSFET featuring a 55V drain-source breakdown voltage and 335mA continuous drain current. It is supplied in a SOT-23 package.
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BSH111,215

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BSH111,215 is an N-channel MOSFET featuring a 55V drain-source breakdown voltage and 335mA continuous drain current. It is supplied in a SOT-23 package.
✓ Total Stock: 295 pcs
$ Price Range: $0.71

BSH111,215 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
295 pcs
On Request
295 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSH111,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Tape & Reel
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BSH111,215 Description

Short technical summary and product information.

This NXP Semiconductors BSH111,215 is an N-channel MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 55V and can handle a continuous drain current of up to 335mA at 25°C ambient temperature.

 

The MOSFET has a low on-state resistance, with a maximum of 1.5 Ohms at 100mA drain current for both 10V and 4.5V gate-source voltages. The typical gate threshold voltage is 1V, with a maximum of 1.5V at 100µA drain current.

 

Packaged in a compact SOT-23 surface-mount case, this component is suitable for space-constrained designs. It is supplied on tape and reel, with a standard package quantity of 3000 units.

 

Environmental compliance includes RoHS3 compliance and an MSL 1 rating, indicating unlimited shelf life under standard conditions.

BSH111,215 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: BSH111,215 N-Channel MOSFET
Subcategory: N-Channel

BSH111,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSH111,215 Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSH111,215 Features

  • N-channel MOSFET with 55V breakdown voltage.
  • 335mA continuous drain current capability.
  • Low Rds(on) of 1.5 Ohm maximum.
  • Gate threshold voltage around 1V.
  • Compact SOT-23 surface-mount package.

BSH111,215 Applications

  • Suitable for low-current switching applications.
  • Used in portable electronic devices.
  • Ideal for signal switching in consumer electronics.
  • Applicable in battery-powered circuits.
  • Suitable for small-signal switching tasks.

BSH111,215 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the continuous drain current for the BSH111,215 MOSFET?

The continuous drain current is 335mA at 25°C.

What is the drain-source breakdown voltage of the BSH111,215?

The minimum drain-source breakdown voltage is 55V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 1V at 100µA.

What is the maximum on-state resistance (Rds(on))?

The maximum Rds(on) is 1.5 Ohm at 100mA drain current.

What package type is the BSH111,215 MOSFET in?

It is supplied in a SOT-23 package.

What is the Moisture Sensitivity Level (MSL) for this part?

The MSL is 1 Unlimited.

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