| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70,000 pcs
|
70000 pcs | On Request | 1 | On Request | On Request | 10+PB | On Request | On Request | |
|
3,196 pcs
|
3196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name |
The Nexperia BSH105 is a logic-level, field-effect power transistor. This N-channel enhancement mode MOSFET is characterized by its very low threshold voltage and extremely fast switching speed, making it suitable for battery-powered applications and high-speed digital interfacing.
The device is supplied in a subminiature SOT23 surface mounting package. Key electrical characteristics include a drain-source voltage of 20V, a continuous drain current of 1.05A at 25°C, and a gate threshold voltage typically around 0.57V. The low threshold voltage and fast switching make it an efficient choice for power management in portable devices.
With a total power dissipation of 0.417W at 25°C, the BSH105 is designed for moderate power applications. Its thermal resistance junction to ambient is 300 K/W on an FR4 board. The operating temperature range is from -55°C to 150°C.
This MOSFET is ideal for applications requiring low voltage operation and quick response times, such as in portable electronics, digital logic level shifting, and power switching circuits where space is a constraint due to its SOT23 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
1.05 A at 25°C and 0.67 A at 100°C.
≤250 mΩ.
-55°C to 150°C.
0.4 V to 0.57 V.
4.2 A at 25°C.
SOT23, surface mount.