| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,182 pcs
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7182 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSH103,235 from NXP Semiconductors is an N-channel enhancement mode MOSFET. It is designed for applications requiring a 30V drain-source breakdown voltage and can handle a continuous drain current of up to 0.85A at 25°C ambient temperature, with a maximum power dissipation of 540mW.
Key electrical characteristics include a typical input capacitance of 83pF and a low on-resistance of 400mOhm. The device offers fast switching speeds with a typical rise time of 3.5ns and a fall time of 7ns.
This MOSFET is packaged in a surface-mount SOT-23-3 (TO-236AB) case, making it suitable for space-constrained designs. The operating temperature range is from -55°C to 150°C. It is RoHS3 compliant, indicating adherence to environmental standards.
Ideal for various switching and amplification tasks in electronic circuits, the BSH103,235 provides reliable performance in a standard surface-mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
It is packaged in SOT-23-3.
The operating junction temperature range is -55°C to 150°C.
The maximum power dissipation is 540mW at 25°C ambient.
The continuous drain current is 0.85A at 25°C ambient.
The typical rise time is 3.5ns and fall time is 7ns.
The input capacitance is 83pF at 24V drain-source voltage.