| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
103,889 pcs
|
103889 pcs | On Request | 1 | On Request | On Request | 1822+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The BSG0812ND from Infineon Technologies is a dual asymmetric N-channel OptiMOS™5 MOSFET designed for high-performance buck converters. It features a drain-source breakdown voltage of 25V and a continuous drain current rating of up to 50A at 70°C case temperature with VGS=10V.
This MOSFET offers low on-state resistance, with a maximum RDS(on) of 0.9 mΩ (Q2) and 3.5 mΩ (Q1) at VGS=10V and ID=20A. It also has a maximum RDS(on) of 1.3 mΩ (Q2) and 4.6 mΩ (Q1) at VGS=4.5V and ID=20A, indicating its suitability for logic-level applications.
The device operates within a temperature range of -55°C to 150°C. It is packaged in a PG-TISON-8-4 package, suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage of 1.6V and various capacitance values such as Ciss, Coss, and Crss for both Q1 and Q2. Dynamic characteristics like turn-on delay, rise time, turn-off delay, and fall time are also specified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 25V.
The maximum continuous drain current is 50A.
The typical gate threshold voltage is 1.6V.
The package type is PG-TISON-8-4.
The operating and storage temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.