BSG0812ND The Infineon Technologies BSG0812ND is a dual asymmetric N-channel OptiMOS™5 MOSFET. It offers a 25V drain-source breakdown voltage and up to 50A continuous drain current.
Mfr Part #:

BSG0812ND

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSG0812ND is a dual asymmetric N-channel OptiMOS™5 MOSFET. It offers a 25V drain-source breakdown voltage and up to 50A continuous drain current.
✓ Total Stock: 103,889 pcs
$ Price Range: $2.40

BSG0812ND Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
103,889 pcs
103889 pcs On Request 1 On Request On Request 1822+ On Request On Request

BSG0812ND Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
SVHC Present

BSG0812ND Description

Short technical summary and product information.

The BSG0812ND from Infineon Technologies is a dual asymmetric N-channel OptiMOS™5 MOSFET designed for high-performance buck converters. It features a drain-source breakdown voltage of 25V and a continuous drain current rating of up to 50A at 70°C case temperature with VGS=10V.

 

This MOSFET offers low on-state resistance, with a maximum RDS(on) of 0.9 mΩ (Q2) and 3.5 mΩ (Q1) at VGS=10V and ID=20A. It also has a maximum RDS(on) of 1.3 mΩ (Q2) and 4.6 mΩ (Q1) at VGS=4.5V and ID=20A, indicating its suitability for logic-level applications.

 

The device operates within a temperature range of -55°C to 150°C. It is packaged in a PG-TISON-8-4 package, suitable for surface mounting.

 

Key electrical characteristics include a gate threshold voltage of 1.6V and various capacitance values such as Ciss, Coss, and Crss for both Q1 and Q2. Dynamic characteristics like turn-on delay, rise time, turn-off delay, and fall time are also specified.

BSG0812ND Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Dual asymmetric N-channel OptiMOS™5 MOSFET
Subcategory: N-Channel

BSG0812ND Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

BSG0812ND Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSG0812ND Features

  • Dual asymmetric N-channel OptiMOS™5 MOSFET
  • Logic level (4.5V rated) operation
  • 25V drain-source breakdown voltage
  • Up to 50A continuous drain current
  • PG-TISON-8-4 package

BSG0812ND Applications

  • High-performance buck converter designs
  • Dual asymmetric N-channel MOSFET applications
  • Logic-level gate drive circuits
  • Power management in compact electronics
  • Efficient DC-DC conversion systems

BSG0812ND FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the BSG0812ND MOSFET?

The drain-source breakdown voltage is 25V.

What is the maximum continuous drain current for the BSG0812ND?

The maximum continuous drain current is 50A.

What is the typical gate threshold voltage for the BSG0812ND?

The typical gate threshold voltage is 1.6V.

What is the package type for the BSG0812ND MOSFET?

The package type is PG-TISON-8-4.

What is the operating temperature range for the BSG0812ND?

The operating and storage temperature range is -55°C to 150°C.

Is the BSG0812ND RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSG0812ND?

The Moisture Sensitivity Level is 1 Unlimited.

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