| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,000 pcs
|
11000 pcs | On Request | 1 | On Request | On Request | 12+PBF | On Request | On Request | |
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSF134N10NJ3 G is a surface-mount N-channel power MOSFET from Infineon Technologies, designed for high-efficiency power conversion. It features a drain-source voltage rating of 100V and a continuous drain current of 40A at case temperature (Tc). The device offers a low on-state resistance of 13.4 mΩ maximum at 30A and 10V gate drive, minimizing conduction losses. With a gate charge of 30 nC and input capacitance of 2300 pF, it is suitable for medium-frequency switching applications such as DC-DC converters and power management circuits.
This MOSFET requires a gate drive voltage of 6V to 10V for optimal Rds(on) performance. The gate threshold voltage is 3.5V maximum at 40 µA drain current. The device can handle a maximum gate-source voltage of ±20V. Power dissipation is rated at 2.2W at ambient temperature (Ta) and 43W at case temperature (Tc), allowing for robust thermal management.
Housed in the DirectFET Isometric MX package (MG-WDSON-2-2), this MOSFET supports surface mount assembly and offers excellent thermal performance. The operating junction temperature range is -40°C to 150°C, ensuring reliability in harsh environments. The package is designed for efficient heat transfer and low parasitic inductance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.96 | $2.96 |
| 10+ | $1.92 | $1.92 |
| 100+ | $1.32 | $1.32 |
| 500+ | $1.07 | $1.07 |
| 1,000+ | $0.94 | $0.94 |
| 5,000+ | $0.94 | $0.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V
40A at case temperature (Tc) or 9A at ambient temperature (Ta)
13.4 mΩ maximum at 30A drain current and 10V gate-source voltage
DirectFET Isometric MX (MG-WDSON-2-2) surface mount package
-40°C to 150°C (junction temperature)
RoHS3 Compliant (unverified, low confidence)
30 nC maximum at 10V gate-source voltage