| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50,000 pcs
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50000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The BSF053N03LT G is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for surface-mount applications and comes in a 3-WDSON package, also known as MG-WDSON-2 or CanPAK M. The device is rated for a maximum drain-to-source voltage of 30V and can handle continuous drain currents of 16A at 25°C ambient temperature and 71A at 25°C case temperature.
This MOSFET features a low maximum on-resistance of 5.3mOhm at a drain current of 30A and a gate-source voltage of 10V. It supports gate drive voltages of 4.5V and 10V, with a maximum gate-source voltage of ±20V. The gate threshold voltage is typically 2.2V at a drain current of 250µA. The device has a maximum gate charge of 29nC at 10V and an input capacitance of 2700pF at 15V drain-source voltage.
With a maximum power dissipation of 2.2W at 25°C ambient and 42W at 25°C case temperature, the BSF053N03LT G is suitable for power management and switching applications. It operates over a junction temperature range of -40°C to 150°C, making it suitable for a wide range of environments.
The surface-mount 3-WDSON package is compact and designed for efficient thermal performance. This MOSFET is intended for use in circuits requiring efficient power switching and low conduction losses.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 16A at 25°C ambient temperature and 71A at 25°C case temperature.
The maximum on-resistance is 5.3mOhm at a drain current of 30A and a gate-source voltage of 10V.
The operating junction temperature range is -40°C to 150°C.
The device is available in a 3-WDSON surface-mount package, also known as MG-WDSON-2 or CanPAK M.
The part is marked as RoHS3 compliant, but this is unverified and should be confirmed with official documentation.