| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
115,000 pcs
|
115000 pcs | On Request | 1 | On Request | On Request | 09+PBF | On Request | On Request | |
|
50,000 pcs
|
50000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSF050N03LQ3G is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, offering a maximum drain-source voltage of 30V and a continuous drain current of 60A at case temperature 25°C. The device features a low maximum on-resistance of 5mOhm at Vgs=10V and Id=20A, enabling reduced conduction losses.
This MOSFET uses metal oxide (MOSFET) technology and supports gate drive voltages of 4.5V and 10V, with a maximum gate threshold voltage of 2.2V at 250µA. It has a maximum gate-source voltage of ±20V, input capacitance of 3000pF at Vds=15V, and gate charge of 42nC at Vgs=10V, which are important for switching performance.
The device is surface mount and comes in the DirectFET Isometric MX package (supplier device package MG-WDSON-2). It can dissipate up to 28W at case temperature 25°C and operates over a junction temperature range of -40°C to 150°C. These characteristics make it suitable for power management and load switching in compact designs.
| Qty | Low | High |
|---|---|---|
| 525+ | $0.57 | $0.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The maximum drain current is 15A at ambient temperature (Ta=25°C) and 60A at case temperature (Tc=25°C).
The maximum drain-source on-resistance is 5mOhm at Vgs=10V and Id=20A.
The operating junction temperature range is -40°C to 150°C.
The BSF050N03LQ3G is available in a DirectFET Isometric MX surface-mount package, with supplier device package MG-WDSON-2.
The part is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.