BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,100 pcs
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1100 pcs | On Request | 1 | On Request | On Request | 1242+ | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present |
The Infineon Technologies BSF035NE2LQ is an N-channel OptiMOSTM Power-MOSFET. It is optimized for high-performance buck converter applications, offering features such as low parasitic inductance and a low profile of less than 0.7 mm. This device is 100% avalanche tested and 100% R G tested, ensuring reliability.
Key electrical specifications include a Drain-Source Breakdown Voltage (V(BR)DSS) of 25 V, a Gate Threshold Voltage (VGS(th)) typically 1.2 V, and a maximum Drain-Source On-State Resistance (RDS(on)) of 3.5 mW at VGS=10 V and ID=30 A. The continuous drain current (ID) is rated at 69 A at TC=25 °C.
This MOSFET is housed in an MG-WDSON-2 package, compatible with the DirectFET® SQ footprint. It supports double-sided cooling and is qualified according to JEDEC standards for target applications. The operating and storage temperature range is -40 °C to 150 °C.
With its robust design and performance characteristics, the BSF035NE2LQ is suitable for various power electronics designs requiring efficient and reliable switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 69 A at TC=25 °C.
The typical Drain-Source On-State Resistance is 2.9 mW at VGS=10 V and ID=30 A.
The package type is MG-WDSON-2.
The operating temperature range is -40 °C to 150 °C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.