| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,492 pcs
|
4492 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
3,421 pcs
|
3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
718 pcs
|
718 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon BSF030NE2LQ is an n-Channel Power MOSFET from the OptiMOS™25V family, engineered for high power density and energy-efficient solutions. It is optimized for high-performance buck converters and features an ultra-low on-state resistance of 3mΩ at a gate-source voltage of 10V.
This MOSFET boasts a continuous drain current rating of 75A at 25°C case temperature and 47A at 100°C case temperature. It is 100% avalanche tested and offers low parasitic inductance. The device is available in a low-profile MG-WDSON-2 package, suitable for surface mounting.
Designed to meet demanding requirements in voltage regulator solutions for servers, datacom, and telecom applications, the BSF030NE2LQ also supports double-sided cooling and is Pb-free and halogen-free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSF030NE2LQ is 25V.
The typical on-state resistance (RDS(on)) for the BSF030NE2LQ is 3mΩ at a gate-source voltage of 10V.
The continuous drain current (ID) for the BSF030NE2LQ is 75A at a case temperature of 25°C and VGS of 10V.
The BSF030NE2LQ is available in the MG-WDSON-2 package.
Yes, the BSF030NE2LQ is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the BSF030NE2LQ is 1.
The BSF030NE2LQ is REACH Unaffected.