| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
265 pcs
|
265 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Infineon BSD840NH6327XTSA1 is a dual N-channel enhancement mode MOSFET from the OptiMOS 2 small-signal transistor family. It features an ultra logic level gate rated for 1.8V operation, allowing direct drive from low-voltage logic circuits. The device is rated for a maximum drain-source voltage of 20V and a continuous drain current of 0.88A at 25°C ambient temperature, with a pulsed drain current capability of 3.5A.
Key electrical characteristics include a typical drain-source on-state resistance of 270mΩ at Vgs=2.5V and Id=0.88A, and 373mΩ at Vgs=1.8V and Id=0.19A. The gate threshold voltage ranges from 0.3V to 0.75V, ensuring compatibility with low-voltage drive signals. The device also features low gate charge (0.26nC total) and fast switching times, making it suitable for high-frequency switching applications.
The BSD840NH6327XTSA1 is qualified according to AEC Q101, making it suitable for automotive applications. It is 100% lead-free, RoHS compliant, and halogen-free according to IEC61249-2-21. The device is available in a PG-SOT-363 surface-mount package and is supplied in tape and reel packaging with 3000 pieces per reel.
With its dual N-channel configuration, this MOSFET is ideal for space-constrained designs requiring two independent switching channels. The device operates over a junction temperature range of -55°C to 150°C and has a power dissipation rating of 0.5W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.46 | $0.46 |
| 10+ | $0.28 | $0.28 |
| 100+ | $0.18 | $0.18 |
| 500+ | $0.13 | $0.13 |
| 1,000+ | $0.12 | $0.12 |
| 3,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
The continuous drain current is 0.88A at 25°C ambient temperature and 0.71A at 70°C.
The junction operating temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant and 100% lead-free according to the datasheet.
The device is available in a 6-VSSOP, SC-88, SOT-363 surface-mount package (supplier device package PG-SOT363-PO).
The typical on-state resistance is 270mΩ with a maximum of 400mΩ at Vgs=2.5V and Id=0.88A.
Yes, the device is qualified according to AEC Q101.