| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
32 pcs
|
32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The Infineon BSD840NH6327 is a high-performance N-Channel MOSFET suitable for a wide range of electronic applications. This component offers a drain-source breakdown voltage of 20V and a continuous drain current of 880mA, making it a reliable choice for power management circuits.
With a low drain-source on-resistance of 270 mOhms at a gate-source voltage of 4.5V and a gate-source threshold voltage of 300mV, the BSD840NH6327 ensures efficient operation. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 500mW.
The MOSFET is housed in a compact SOT-363-6 surface-mount package, measuring 2mm in length and 0.9mm in height. Its dual-channel configuration and enhancement mode operation provide flexibility for various circuit designs. The component is manufactured using Silicon technology.
This MOSFET is qualified under AEC-Q101, indicating its suitability for automotive and industrial applications requiring high reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
880 mA.
270 mOhms at Vgs = 4.5V.
300 mV.
500 mW.
SOT-363-6.
-55°C to +150°C.